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Diodes Inc P-Channel MOSFET, 8.6 A, 40 V, 3-Pin DPAK DMP4025LK3-13

Номер на артикул на RS: 823-2959Марка: DiodesZetex№ по каталога на производителя: DMP4025LK3-13
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.26mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 8,82

€ 0,353 Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 8.6 A, 40 V, 3-Pin DPAK DMP4025LK3-13
Изберете тип опаковка

€ 8,82

€ 0,353 Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 8.6 A, 40 V, 3-Pin DPAK DMP4025LK3-13
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.26mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more