Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 110,68
€ 1,107 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 110,68
€ 1,107 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 1,107 | € 11,07 |
250 - 490 | € 0,933 | € 9,32 |
500 - 990 | € 0,874 | € 8,74 |
1000+ | € 0,816 | € 8,16 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта