Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3

Номер на артикул на RS: 812-3195Марка: Vishay№ по каталога на производителя: SI4124DY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 13,19

€ 1,319 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
Изберете тип опаковка

€ 13,19

€ 1,319 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 40€ 1,319€ 13,19
50 - 90€ 1,24€ 12,40
100 - 240€ 1,122€ 11,22
250 - 490€ 1,056€ 10,56
500+€ 0,99€ 9,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

51 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4mm

Number of Elements per Chip

1

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от