Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820APBF

Номер на артикул на RS: 542-9412Марка: Vishay№ по каталога на производителя: IRF820APBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.41mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRF820A 2.5A 500V
P.O.A.Всеки (ex VAT)

€ 1,20

€ 1,20 Всеки (ex VAT)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820APBF
Изберете тип опаковка

€ 1,20

€ 1,20 Всеки (ex VAT)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820APBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 9€ 1,20
10 - 49€ 1,08
50 - 99€ 1,02
100 - 249€ 0,90
250+€ 0,84

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRF820A 2.5A 500V
P.O.A.Всеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.41mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRF820A 2.5A 500V
P.O.A.Всеки (ex VAT)