Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Страна на произход
China
Детайли за продукта
MOSFET Transistors, Toshiba
€ 5,68
€ 1,136 Each (In a Pack of 5) (ex VAT)
5
€ 5,68
€ 1,136 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
5
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 1,136 | € 5,68 |
25 - 95 | € 1,002 | € 5,01 |
100 - 245 | € 0,875 | € 4,37 |
250 - 495 | € 0,819 | € 4,10 |
500+ | € 0,771 | € 3,86 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Страна на произход
China
Детайли за продукта