STMicroelectronics MDmesh DM2 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 STW56N60DM2

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
€ 9,84
€ 9,84 Всеки (ex VAT)
Стандарт
1
€ 9,84
€ 9,84 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 4 | € 9,84 |
5 - 9 | € 9,34 |
10 - 24 | € 8,41 |
25 - 49 | € 7,58 |
50+ | € 7,19 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
90 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.15mm
Forward Diode Voltage
1.6V
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified