STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17 A, 500 V, 3-Pin TO-247 STW20NK50Z

Номер на артикул на RS: 486-3114Марка: STMicroelectronics№ по каталога на производителя: STW20NK50Z
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

85 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 4,23

€ 4,23 Всеки (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17 A, 500 V, 3-Pin TO-247 STW20NK50Z
Изберете тип опаковка

€ 4,23

€ 4,23 Всеки (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17 A, 500 V, 3-Pin TO-247 STW20NK50Z
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 9€ 4,23
10 - 24€ 3,83
25 - 99€ 3,61
100 - 499€ 2,87
500+€ 2,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

85 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more