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STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4

Номер на артикул на RS: 188-8527Марка: STMicroelectronics№ по каталога на производителя: STB80NF55-06T4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

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Информацията за складовите наличности временно не е налична.

€ 19,59

€ 3,919 Each (In a Pack of 5) (ex VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
Изберете тип опаковка

€ 19,59

€ 3,919 Each (In a Pack of 5) (ex VAT)

STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 20€ 3,919€ 19,59
25 - 45€ 3,682€ 18,41
50 - 120€ 3,485€ 17,42
125 - 245€ 3,292€ 16,46
250+€ 3,14€ 15,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

9.35mm

Length

10.4mm

Typical Gate Charge @ Vgs

142 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

4.37mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more