Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
Each (Supplied in a Bag) (ex VAT)
Производствен пакет (Чувал)
10
P.O.A.
Each (Supplied in a Bag) (ex VAT)
Производствен пакет (Чувал)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
2.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.