onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

Номер на артикул на RS: 790-5274PМарка: onsemi№ по каталога на производителя: NTR2101PT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 8,08

€ 0,081 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
Изберете тип опаковка

€ 8,08

€ 0,081 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
100 - 200€ 0,081€ 4,04
250 - 450€ 0,077€ 3,87
500 - 950€ 0,075€ 3,75
1000+€ 0,072€ 3,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Детайли за продукта

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от