onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG

Номер на артикул на RS: 186-1352Марка: onsemi№ по каталога на производителя: NTMTS0D6N04CLTXG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Информацията за складовите наличности временно не е налична.

€ 7,19

€ 3,595 Each (In a Pack of 2) (ex VAT)

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
Изберете тип опаковка

€ 7,19

€ 3,595 Each (In a Pack of 2) (ex VAT)

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
2 - 18€ 3,595€ 7,19
20 - 198€ 3,098€ 6,20
200 - 998€ 2,688€ 5,38
1000 - 1998€ 2,364€ 4,73
2000+€ 2,15€ 4,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more