Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 5,32
€ 0,053 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 5,32
€ 0,053 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,053 | € 0,53 |
250 - 490 | € 0,052 | € 0,52 |
500 - 990 | € 0,05 | € 0,50 |
1000+ | € 0,049 | € 0,49 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.