Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
10 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Детайли за продукта
Small Signal PNP Transistors, Up to 30V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (In a Pack of 5) (ex VAT)
Стандарт
5
P.O.A.
Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
10 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-40 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
8 x 3.25 x 11mm
Детайли за продукта
Small Signal PNP Transistors, Up to 30V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.