Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS Power Transistor
Package Type
PG-TSDSON-8 FL
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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€ 1 677,82
€ 0,336 Each (On a Reel of 5000) (ex VAT)
5000
€ 1 677,82
€ 0,336 Each (On a Reel of 5000) (ex VAT)
5000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS Power Transistor
Package Type
PG-TSDSON-8 FL
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products