Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4..5V
Number of Elements per Chip
2
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€ 143,61
€ 4,787 Each (In a Tube of 30) (ex VAT)
30
€ 143,61
€ 4,787 Each (In a Tube of 30) (ex VAT)
30
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 30 | € 4,787 | € 143,61 |
| 60 - 120 | € 4,548 | € 136,43 |
| 150+ | € 4,356 | € 130,67 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4..5V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products