Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 19,07
€ 4,766 Each (In a Pack of 4) (ex VAT)
4
€ 19,07
€ 4,766 Each (In a Pack of 4) (ex VAT)
Информацията за складовите наличности временно не е налична.
4
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Опаковка |
---|---|---|
4 - 16 | € 4,766 | € 19,07 |
20 - 36 | € 4,53 | € 18,12 |
40 - 96 | € 4,339 | € 17,36 |
100 - 196 | € 4,146 | € 16,58 |
200+ | € 3,86 | € 15,44 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.