Diodes Inc Quad N/P-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC ZXMHC3F381N8TC

Номер на артикул на RS: 751-5344Марка: DiodesZetex№ по каталога на производителя: ZXMHC3F381N8TC
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Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

4.1 A, 4.98 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ, 80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.35 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

4

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 4,76

€ 0,953 Each (In a Pack of 5) (ex VAT)

Diodes Inc Quad N/P-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC ZXMHC3F381N8TC
Изберете тип опаковка

€ 4,76

€ 0,953 Each (In a Pack of 5) (ex VAT)

Diodes Inc Quad N/P-Channel MOSFET, 4.1 A, 4.98 A, 30 V, 8-Pin SOIC ZXMHC3F381N8TC
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

4.1 A, 4.98 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ, 80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.35 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

4

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more