Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
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€ 1 148,09
€ 0,383 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 148,09
€ 0,383 Each (On a Reel of 3000) (ex VAT)
3000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
3.3mm
Length
3.3mm
Typical Gate Charge @ Vgs
154 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products