STMicroelectronics STripFET II N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220 STP140NF75
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
160 nC @ 10 V
Length
10.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 6,54
€ 3,268 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
2
€ 6,54
€ 3,268 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
2
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
160 nC @ 10 V
Length
10.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products