Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 10,46
€ 0,105 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 10,46
€ 0,105 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,105 | € 1,05 |
250 - 490 | € 0,10 | € 1,00 |
500 - 990 | € 0,094 | € 0,94 |
1000+ | € 0,077 | € 0,77 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Width
1.4mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.