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onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z

Номер на артикул на RS: 184-4156Марка: onsemi№ по каталога на производителя: 2N7000-D26Z
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.19mm

Length

5.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 198,78

€ 0,099 Each (On a Reel of 2000) (ex VAT)

onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z

€ 198,78

€ 0,099 Each (On a Reel of 2000) (ex VAT)

onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
2000 - 4000€ 0,099€ 198,78
6000 - 8000€ 0,097€ 194,00
10000+€ 0,095€ 189,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.19mm

Length

5.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more