Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 2,19
€ 2,19 Всеки (ex VAT)
Стандарт
1
€ 2,19
€ 2,19 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 9 | € 2,19 |
| 10 - 49 | € 2,14 |
| 50 - 99 | € 2,04 |
| 100 - 249 | € 1,92 |
| 250+ | € 1,83 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products