Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Страна на произход
Taiwan, Province Of China
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€ 12,91
€ 1,291 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 12,91
€ 1,291 Each (In a Pack of 10) (ex VAT)
Стандарт
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 1,291 | € 12,91 |
| 100 - 490 | € 1,097 | € 10,97 |
| 500 - 990 | € 0,969 | € 9,69 |
| 1000+ | € 0,84 | € 8,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Страна на произход
Taiwan, Province Of China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products