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Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Номер на артикул на RS: 827-6113Марка: Toshiba№ по каталога на производителя: TK12E60W,S1VX(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 11,97

€ 2,394 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Изберете тип опаковка

€ 11,97

€ 2,394 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 20€ 2,394€ 11,97
25 - 45€ 1,921€ 9,60
50 - 120€ 1,749€ 8,75
125 - 245€ 1,604€ 8,02
250+€ 1,438€ 7,19

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more