Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 54,19
€ 1,084 Each (In a Tube of 50) (ex VAT)
50
€ 54,19
€ 1,084 Each (In a Tube of 50) (ex VAT)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 1,084 | € 54,19 |
100 - 450 | € 0,842 | € 42,09 |
500 - 950 | € 0,713 | € 35,63 |
1000 - 4950 | € 0,595 | € 29,76 |
5000+ | € 0,56 | € 28,02 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.