STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z

Номер на артикул на RS: 761-0014PМарка: STMicroelectronics№ по каталога на производителя: STP14NK50Z
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

69 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 24,10

€ 2,41 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z
Изберете тип опаковка

€ 24,10

€ 2,41 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220 STP14NK50Z

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
10 - 95€ 2,41€ 12,05
100 - 495€ 1,931€ 9,66
500 - 995€ 1,718€ 8,59
1000+€ 1,45€ 7,25

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Series

MDmesh, SuperMESH

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

69 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more