STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Forward Diode Voltage
1.5V
Height
4.37mm
€ 25,83
€ 5,166 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
€ 25,83
€ 5,166 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.35mm
Length
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Forward Diode Voltage
1.5V
Height
4.37mm