STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

Номер на артикул на RS: 168-5846Марка: STMicroelectronics№ по каталога на производителя: BUL216
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Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Детайли за продукта

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Информацията за складовите наличности временно не е налична.

€ 73,63

€ 1,473 Each (In a Tube of 50) (ex VAT)

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

€ 73,63

€ 1,473 Each (In a Tube of 50) (ex VAT)

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
50 - 50€ 1,473€ 73,63
100 - 200€ 1,154€ 57,68
250 - 450€ 1,122€ 56,10
500 - 950€ 0,981€ 49,03
1000+€ 0,832€ 41,61

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Детайли за продукта

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more