ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
880 W
Number of Elements per Chip
2
Width
45.6mm
Length
122mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Страна на произход
Japan
Детайли за продукта
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
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€ 619,40
€ 619,40 Всеки (ex VAT)
1
€ 619,40
€ 619,40 Всеки (ex VAT)
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 1 | € 619,40 |
| 2 - 4 | € 603,10 |
| 5 - 9 | € 587,64 |
| 10+ | € 572,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
880 W
Number of Elements per Chip
2
Width
45.6mm
Length
122mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Страна на произход
Japan
Детайли за продукта
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products