Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
China
Детайли за продукта
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 240,70
€ 0,08 Each (On a Reel of 3000) (ex VAT)
3000
€ 240,70
€ 0,08 Each (On a Reel of 3000) (ex VAT)
3000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
China
Детайли за продукта