IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Polar
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 5,55
€ 5,55 Всеки (ex VAT)
Стандарт
1
€ 5,55
€ 5,55 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 4 | € 5,55 |
| 5 - 19 | € 5,17 |
| 20 - 49 | € 4,85 |
| 50 - 99 | € 4,19 |
| 100+ | € 4,01 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Polar
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products