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International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

Номер на артикул на RS: 170-2272Марка: International Rectifier№ по каталога на производителя: IRF7424TRPBF
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Series

IRF7424PbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

1.5mm

Minimum Operating Temperature

-55 °C

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Информацията за складовите наличности временно не е налична.

€ 2 074,07

€ 0,519 Each (On a Reel of 4000) (ex VAT)

International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

€ 2 074,07

€ 0,519 Each (On a Reel of 4000) (ex VAT)

International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Series

IRF7424PbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more