Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Series
CoolSiC
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Transistor Material
Silicon
Number of Elements per Chip
1
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€ 6,86
€ 6,86 Всеки (ex VAT)
Стандарт
1
€ 6,86
€ 6,86 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 4 | € 6,86 |
| 5 - 9 | € 6,52 |
| 10 - 24 | € 6,24 |
| 25 - 49 | € 5,96 |
| 50+ | € 5,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Series
CoolSiC
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products