Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
TSFP
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
85 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.4 x 0.8 x 0.55mm
Maximum Operating Temperature
+150 °C
€ 33,47
€ 0,335 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 33,47
€ 0,335 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 180 | € 0,335 | € 6,69 |
200 - 480 | € 0,301 | € 6,02 |
500 - 980 | € 0,271 | € 5,42 |
1000+ | € 0,257 | € 5,15 |
Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
TSFP
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
85 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.4 x 0.8 x 0.55mm
Maximum Operating Temperature
+150 °C