Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-E3

Name: Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-E3
Brand: Vishay
SKU: 1526382
Availability: LimitedAvailability

Номер на артикул на RS: 152-6382Марка: Vishay№ по каталога на производителя: TP0610K-T1-E3

Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay

Channel Type

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

Width

2.64mm

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.4V

Height

1.02mm

Информацията за складовите наличности временно не е налична.

€ 6,25

€ 0,25 Each (In a Pack of 25) (ex VAT)

Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-E3

Изберете тип опаковка

Стандарт

€ 6,25

€ 0,25 Each (In a Pack of 25) (ex VAT)

Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-E3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Стандарт

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количество	Единична цена	Per Опаковка
25 - 225	€ 0,25	€ 6,25
250 - 600	€ 0,199	€ 4,99
625 - 1225	€ 0,15	€ 3,76
1250 - 2475	€ 0,126	€ 3,14
2500+	€ 0,113	€ 2,82

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Технически документи

Спецификации

Brand

Vishay

Channel Type

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

Width

2.64mm

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.4V

Height

1.02mm