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Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

Номер на артикул на RS: 919-0922Марка: Vishay№ по каталога на производителя: SUM110P06-08L-E3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 1 616,36

€ 2,02 Each (On a Reel of 800) (ex VAT)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

€ 1 616,36

€ 2,02 Each (On a Reel of 800) (ex VAT)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от