Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 25,13
€ 1,256 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
20
€ 25,13
€ 1,256 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
20
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
20 - 98 | € 1,256 | € 2,51 |
100 - 198 | € 1,128 | € 2,26 |
200 - 498 | € 1,064 | € 2,13 |
500+ | € 0,999 | € 2,00 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Детайли за продукта