Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 87,43
€ 0,437 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
200
€ 87,43
€ 0,437 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
200
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 200 - 480 | € 0,437 | € 8,74 |
| 500 - 980 | € 0,367 | € 7,34 |
| 1000 - 1980 | € 0,347 | € 6,94 |
| 2000+ | € 0,297 | € 5,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products