Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Страна на произход
Malaysia
Детайли за продукта
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 78,49
€ 0,785 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 78,49
€ 0,785 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,785 | € 7,85 |
250 - 490 | € 0,723 | € 7,23 |
500 - 990 | € 0,681 | € 6,80 |
1000+ | € 0,567 | € 5,67 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Страна на произход
Malaysia
Детайли за продукта