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Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF

Номер на артикул на RS: 541-1039Марка: Vishay№ по каталога на производителя: IRFD110PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFD110 1A 100V
P.O.A.Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.

€ 0,93

€ 0,93 Всеки (ex VAT)

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF
Изберете тип опаковка

€ 0,93

€ 0,93 Всеки (ex VAT)

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 9€ 0,93
10 - 49€ 0,75
50 - 99€ 0,70
100 - 249€ 0,65
250+€ 0,61

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFD110 1A 100V
P.O.A.Всеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFD110 1A 100V
P.O.A.Всеки (ex VAT)