Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

Номер на артикул на RS: 896-2401Марка: Toshiba№ по каталога на производителя: TK58A06N1,S4X(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 3,55

€ 0,71 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

5

Предлагат се на бройка по 5
5€ 3,55
10€ 7,10
15€ 10,65
20€ 14,20
25€ 17,74
30€ 21,29
35€ 24,84
40€ 28,39
45€ 31,94
50€ 29,25
55€ 32,17
60€ 35,10
65€ 38,02
70€ 40,95
75€ 43,87

€ 3,55

€ 0,71 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5€ 3,55
10€ 7,10
15€ 10,65
20€ 14,20
25€ 17,74
30€ 21,29
35€ 24,84
40€ 28,39
45€ 31,94
50€ 29,25
55€ 32,17
60€ 35,10
65€ 38,02
70€ 40,95
75€ 43,87

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 45€ 0,71€ 3,55
50 - 95€ 0,585€ 2,92
100 - 245€ 0,532€ 2,66
250 - 495€ 0,52€ 2,60
500+€ 0,511€ 2,56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more