Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Страна на произход
China
Детайли за продукта
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 5,16
€ 5,16 Всеки (ex VAT)
1
€ 5,16
€ 5,16 Всеки (ex VAT)
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 9 | € 5,16 |
10 - 49 | € 4,26 |
50 - 99 | € 3,88 |
100 - 199 | € 3,79 |
200+ | € 3,71 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Страна на произход
China
Детайли за продукта