Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S

Номер на артикул на RS: 896-2344Марка: Toshiba№ по каталога на производителя: TK32A12N1,S4X(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Страна на произход

China

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 3,39

€ 0,678 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S

5

Предлагат се на бройка по 5
5€ 3,39
10€ 6,78
15€ 10,17
20€ 13,56
25€ 16,95
30€ 20,34
35€ 23,73
40€ 27,12
45€ 30,51
50€ 21,97
55€ 24,17
60€ 26,37
65€ 28,57
70€ 30,76
75€ 32,96

€ 3,39

€ 0,678 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S
Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5€ 3,39
10€ 6,78
15€ 10,17
20€ 13,56
25€ 16,95
30€ 20,34
35€ 23,73
40€ 27,12
45€ 30,51
50€ 21,97
55€ 24,17
60€ 26,37
65€ 28,57
70€ 30,76
75€ 32,96

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 45€ 0,678€ 3,39
50 - 95€ 0,439€ 2,20
100 - 195€ 0,428€ 2,14
200 - 395€ 0,418€ 2,09
400+€ 0,404€ 2,02

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Страна на произход

China

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more