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Toshiba 2SJ P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

Номер на артикул на RS: 601-1905Марка: Toshiba№ по каталога на производителя: 2SJ305(F)
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

30 V

Series

2SJ

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 3,60

€ 0,36 Each (In a Pack of 10) (ex VAT)

Toshiba 2SJ P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)

€ 3,60

€ 0,36 Each (In a Pack of 10) (ex VAT)

Toshiba 2SJ P-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 2SJ305(F)
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
10 - 90€ 0,36€ 3,60
100 - 240€ 0,277€ 2,77
250 - 490€ 0,268€ 2,68
500 - 990€ 0,263€ 2,63
1000+€ 0,255€ 2,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

30 V

Series

2SJ

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Japan

Детайли за продукта

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more