Технически документи
Спецификации
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Series
2SJ
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Japan
Детайли за продукта
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
€ 3,60
€ 0,36 Each (In a Pack of 10) (ex VAT)
10
€ 3,60
€ 0,36 Each (In a Pack of 10) (ex VAT)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 90 | € 0,36 | € 3,60 |
100 - 240 | € 0,277 | € 2,77 |
250 - 490 | € 0,268 | € 2,68 |
500 - 990 | € 0,263 | € 2,63 |
1000+ | € 0,255 | € 2,55 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Series
2SJ
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Japan
Детайли за продукта