STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N

Номер на артикул на RS: 761-2792PМарка: STMicroelectronics№ по каталога на производителя: STF26NM60N
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

4.6mm

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 5,68

€ 5,68 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N
Изберете тип опаковка

€ 5,68

€ 5,68 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

4.6mm

Height

16.4mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more