ROHM RUM002N02 N-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-723 RUM002N02T2L

Номер на артикул на RS: 124-6839Марка: ROHM№ по каталога на производителя: RUM002N02T2L
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Технически документи

Спецификации

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Series

RUM002N02

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.9mm

Length

1.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

0.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Детайли за продукта

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 7,01

€ 0,07 Each (In a Pack of 100) (ex VAT)

ROHM RUM002N02 N-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-723 RUM002N02T2L

€ 7,01

€ 0,07 Each (In a Pack of 100) (ex VAT)

ROHM RUM002N02 N-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-723 RUM002N02T2L
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
100 - 400€ 0,07€ 7,01
500 - 900€ 0,046€ 4,56
1000 - 2400€ 0,04€ 3,97
2500 - 4900€ 0,039€ 3,86
5000+€ 0,037€ 3,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Series

RUM002N02

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

0.9mm

Length

1.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

0.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Детайли за продукта

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more