Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
€ 17,13
€ 0,685 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 17,13
€ 0,685 Each (In a Pack of 25) (ex VAT)
Стандарт
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 75 | € 0,685 | € 17,13 |
100 - 225 | € 0,591 | € 14,78 |
250+ | € 0,512 | € 12,79 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V