onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

Номер на артикул на RS: 189-0265Марка: onsemi№ по каталога на производителя: NVHL080N120SC1
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +25 V

Width

4.82mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Maximum Operating Temperature

+175 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4V

Automotive Standard

AEC-Q101

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€ 320,67

€ 10,689 Each (In a Tube of 30) (ex VAT)

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

€ 320,67

€ 10,689 Each (In a Tube of 30) (ex VAT)

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +25 V

Width

4.82mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Maximum Operating Temperature

+175 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more