onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G

Номер на артикул на RS: 163-1141Марка: onsemi№ по каталога на производителя: NTS4101PT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.37 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

329 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Страна на произход

China

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P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 173,40

€ 0,058 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G

€ 173,40

€ 0,058 Each (On a Reel of 3000) (ex VAT)

onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.37 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

329 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.9mm

Страна на произход

China

Детайли за продукта

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more