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onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG

Номер на артикул на RS: 802-4105Марка: onsemi№ по каталога на производителя: NTP6410ANG
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.28mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 15,27

€ 3,054 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
Изберете тип опаковка

€ 15,27

€ 3,054 Each (In a Pack of 5) (ex VAT)

onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

15.75mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.28mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

4.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more